- 您现在的位置：买卖IC网 > Sheet目录528 > TP0101K-T1-GE3 (Vishay Siliconix)MOSFET P-CH D-S 20V TO236
TP0101K
Vishay Siliconix
SPECIFICATIONS T A = 25 °C, unless otherwise noted
Limits
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
V DS
V GS(th)
V GS = 0 V, I D = - 10 μA
V DS = V GS , I D = - 50 μA
- 20
- 0.5
- 0.7
- 1.0
V
Gate-Body Leakage
I GSS
V DS = - 0 V, V GS = ± 4.5 V
±5
Zero Gate Voltage Drain Current
On-State Drain Current a
I DSS
I D(on)
V DS = - 20 V, V GS = 0 V
V DS = - 20 V, V GS = 0 V, T J = 55 °C
V DS ≤ - 5 V, V GS = - 4.5 V
V DS ≤ - 5 V, V GS = - 2.5 V
- 1.2
- 0.5
-1
- 10
μA
A
Drain-Source On-State Resistance a
Forward Transconductance a
Diode Forward Voltage a
R DS(on)
g fs
V SD
V GS = - 4.5 V, I D = - 0.58 A
V GS = - 2.5 V, I D = - 0.5 A
V DS = - 5 V, I D = - 0.58 A
I S = - 0.3 A, V GS = 0 V
0.42
0.64
1300
- 0.9
0.65
0.85
- 1.2
Ω
mS
V
Dynamic
b
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Time
Turn-Off Time
Q g
Q gs
Q gd
R g
t d(on)
t r
t d(off)
t f
V DS = - 6 V, V GS = - 4.5 V
I D ? - 0.58 A
V DD = - 6 V, R L = 10 Ω
I D ? - 0.58 A, V GEN = - 4.5 V, R g = 6 Ω
1400
300
250
150
25
30
55
38
2200
35
45
85
60
pC
Ω
ns
Notes:
a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 72692
S-83053-Rev. B, 29-Dec-08
发布紧急采购，3分钟左右您将得到回复。
相关PDF资料
TRF3702IRHCG4
IC QUADRATURE MODULATOR 16-VQFN
TRF3705IRGET
IC QUADRATURE MODULATOR 24VQFN
TRF7970AEVM
EVAL MODULE FOR TRF7970A
TRM-418-LT
TRANSCEIVER RF 418MHZ LT SERIES
TRM-900-NT
RF TXRX 915MHZ NT SERIES
TRX08GVP2540
TXRX OPT SCFF 8.5GB/S 850NM
TS-320240BRNO
TCH PANEL 140X104 RESISTIVE MONO
TS-TFT3.5Z
TOUCH PANEL 140X1.4.0 TFT
相关代理商/技术参数
TP0101T
功能描述:MOSFET 20V 0.6A 0.35W RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
TP0101TS
功能描述:MOSFET 20V 1A 0.35W RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
TP0101TS-T1
制造商:Vishay Angstrohm 功能描述:Trans MOSFET P-CH 20V 1A 3-Pin TO-236 T/R
TP0101T-T1
制造商:Vishay Angstrohm 功能描述:Trans MOSFET P-CH 20V 0.6A 3-Pin TO-236 T/R
TP0102
制造商:Distributed By MCM 功能描述:Seal Tape - 1/2'' x 520' 制造商:MCM 功能描述:PTFE THRAAD SEAL TAPE 1/2 X 520
TP0104N3
制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 40V V(BR)DSS | TO-92
TP0104N8
制造商:SUPR 功能描述:
TP01100
制造商:未知厂家 制造商全称:未知厂家 功能描述:TotalPlant Solution (TPS) System